Bernard S. Meyerson

Bernard S. Meyerson (born 2 June 1954) is an American solid state physicist.

Bernard S. Meyerson
Born2 June 1954
NationalityAmerican
OccupationSolid state physicist

Meyerson is a native of New York City, born on 2 June 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]

Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]

References
  1. "B. Meyerson". American Institute of Physics. Retrieved 22 February 2022.
  2. "2011 George E. Pake Prize Recipient". American Physical Society. Retrieved 22 February 2022.
  3. "APS fellow archive". American Physical Society. Retrieved 22 February 2022.
  4. "Past J.J. Ebers Award Winners". Electron Devices Society, IEEE. Retrieved 22 February 2022.
  5. "Dr. Bernard S. Meyerson". United States National Academy of Engineering. Retrieved 22 February 2022.
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