ChangXin Memory Technologies

ChangXin Memory Technologies (CXMT, Chinese: 长鑫存储)[lower-alpha 1] is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory.

"Innotron" redirects here. For Innotron Technology Corporation Ltd. (Taiwan), see InnoLux Corporation.
ChangXin Memory Technologies
CXMT
Native name
长鑫存储技术有限公司
FormerlyInnotron Memory
Hefei Chang Xin
Hefei Rui-li Integrated Circuit Manufacturing
TypePrivate
IndustrySemiconductors
FoundedMay 2016 (2016-05)
Headquarters
Hefei, Anhui
,
China
Key people
Zhu Yiming (Chairman & CEO)
Number of employees
3,000
Websitehttps://www.cxmt.com/en/

As of 2020, ChangXin manufactured LPDDR4 and DDR4 memory on a 19 nm process, with a capacity of 40,000 wafers per month.[1] The company planned to increase output to 120,000 wafers per month and launch 17 nm LPDDR5 by the end of 2022, with a target total capacity of 300,000 wafers per month in the long-term.[2]

History

Together with Fujian Jinhua Integrated Circuit (JHICC) and Xi'an UniIC Semiconductors, Innotron was one of a set of Chinese semiconductor plants established in 2016 to compete with global manufacturers of computer memory.[3][4][5] In 2017, a $7.2 billion deal for a 125,000, 12" (300mm) wafer per month production fabrication plant was announced.[6] Innotron's factory was completed by the middle of 2017,[4] and production equipment was installed at the plant in late 2017. Trials and mass production were scheduled for late 2018 and early 2019.[7][8] In 2018, CEO Zhu Yiming was reported to have visited ASML to discuss the purchase of extreme ultraviolet lithography machines.[8]

Initially, Innotron was thought to have chosen 8GB LPDDR4 memory as its first product. At the time, analysts claimed that patent and IP issues would present a barrier to its competing with major manufacturers.[4] In the middle of 2018, trial production of 19 nm 8GB LPDDR4 was reported to have begun.[9] Innotron's initial capacity was ~20,000 wafers per month; a small output in terms of the industry as a whole.[3]

In 2019, Innotron, which had changed its name to Changxin Memory Technologies, was reported to have made some design changes in an attempt to avoid possible technology-related sanctions deriving from the China–United States trade war.[10] In December 2019, in an interview with EE Times, the company stated its first fab was in production and producing 20,000 wafers per month, making 8GB LPDDR4 and DDR4 DRAM at 19 nm.[11]

The company is reported to have increased production to 3% of the world DRAM output, or about 40,000 wafers a month by the end of 2020.[12]

In 2022, the James M. Inhofe National Defense Authorization Act for Fiscal Year 2023 banned the U.S. federal government from buying or using chips from CXMT.[13]

Facilities

As of 2019, CXMT had over 3,000 employees, and runs a fab with a 65,000 square meters clean room space. Over 70% of its employees are engineers working on various research and development related projects. CXMT uses its 10G1 process technology (aka 19 nm) to make 4 GB and 8 GB DDR4 memory chips. It has licensed intellectual property originally created by Qimonda.[14]

LPDDR4 RAM was added to the product portfolio in 2020.[15]

See also

Notes
  1. Formerly known as Innotron Memory, Hefei Chang Xin, or Hefei Rui-li Integrated Circuit Manufacturing.

References
  1. Mellor, Chris (2020-10-13). "Micron said to be mulling action against Chinese DRAM maker CXMT – report". Blocks & Files. Retrieved 2021-08-16.
  2. "China's CXMT Aims to Tackle DDR5 Market Later This Year". 28 February 2022.
  3. Shilov, Anton (25 Apr 2018), "Chinese DRAM Industry Spreading Its Wings: Two More DRAM Fabs Ready", www.anandtech.com
  4. "The Three Major Chinese Memory Companies Arrange Trial Production to Begin in 2H18 and Formal Production in 2019, Says TrendForce", trendforce.com, 19 Apr 2018
  5. "China set to produce first locally designed DRAM chip". Nikkei Asian Review. 12 June 2019. Retrieved 15 May 2020.
  6. "China firms to invest CNY18 billion to develop 19nm DRAM technology", chinaflashmarket.com, 31 Oct 2017
  7. Roos, Gina (26 Apr 2018), "Three Chinese Companies to Start Memory IC Production in 2018", epsnews.com
  8. Ting-Fang, Cheng (22 Oct 2018), "Chinese state-backed chipmaker targets Europe amid US resistance", nikkei.com
  9. Manners, David (19 July 2018), "China memory production gets closer", www.electronicsweekly.com
  10. Ting-Fang, Cheng (12 June 2019), "China set to produce first locally designed DRAM chip - Changxin Memory minimizes US tech to avoid trade war fallout", Nikkei
  11. Yoshida, Junko (3 Dec 2019), "ChangXin Emerging as China's First & Only DRAM Maker", www.eetimes.com
  12. "China memory chip output zooms from zero to 5% of world total". The Nikkei. 20 November 2019. Retrieved 15 May 2020.
  13. "US adds 36 Chinese companies to trade blacklist". Financial Times. 2022-12-15. Retrieved 2022-12-17.
  14. Shilov, Anton (2 Dec 2019), "ChangXin Memory Technologies (CXMT) is Ramping up Chinese DRAM Using Qimonda IP", www.anandtech.com
  15. "Chinese Semiconductor Companies Growing Fast". 비즈니스코리아 - BusinessKorea (in Korean). 28 Feb 2020. Retrieved 2020-02-29.
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