Optogan

The Optogan group of is a vertically integrated producer of High Brightness LED lights based in St. Petersburg, Russia. Optogan is also active in Finland and Germany.[1]

Optogan
IndustryLED
Founded2004
ProductsLED chips
Packaged LEDs
LED Matrixes (standard light engines consisting of surface mounted LEDs)
Lumminaires
Websiteoptogan.ru

Founded in 2004 by three graduates of the Ioffe Physical-Technical Institute, Optogan currently owned by various private and government investment funds.[2]

History

Optogan was founded in 2004 in Espoo, Finland by Dr. Maxim Odnoblyudov, Dr. Vladislav Bougrov and Dr. Alexey Kovsh, graduates of the chair of Nobel Prize laureate Zhores Alferov. They have received several rounds of financing from various European VC investment funds. After the initial technology development stage, the company R&D and pilot production line were expanded to MST Factory site in Dortmund, Germany. After five years of technology development, in 2008 the company was acquired by a strategic investor, the Russian private equity group Onexim. In 2009, Russian government investment funds Rusnano and RIK joined Onexim group as investors to develop a full-scale production facility for HB LEDs in Strelna Free-Economic zone near St. Petersburg, Russia.

Activities

Optogan is investing in further R&D of GaN technology and building an LED manufacturing facility capable of producing 1.5 billion HB LEDs a month near St. Petersburg.[3]

Technology

Optogan company possesses the whole value chain of technologies in solid state lighting (SSL) necessary for the production of GaN based light emitting diodes (LEDs) and consumer-oriented SSL luminaries. The chain of technologies include

  • Epitaxial growth of high-quality semiconductor (GaN) wafers by metal-organic chemical vapor deposition (MOCVD) technique;
  • LED chip design and fabrication;
  • LED packaging including phosphor coating for the conversion of the blue and ultraviolet radiation in visible white light spectrum, and lens molding;
  • Multichip LED mounting on printed circuit board[4] with final assembling of various types of luminaries.

Massive breakthrough in GaN based LED technology started from pioneering works by S. Nakamura in the early 1990s. OptoGaN technologies are characterized by improved quality of GaN wafers[5] and patented LED epilayer structure with enhanced light generation capability, original f-PowerTM chip design enabling uniform electric current distribution in excess of 300 A/cm2, effectiveness of LEDs as high as 110 lm/W which is at the front level of World leading LED manufactures.[6] OptoGaN intellectual property (IP) and technologies are covered by 35 granted and pending patents.

References
  1. "Home". optogan.com.
  2. Голодные львы инноваций//Эксперт, 21 сентября 2009г.
  3. Россия заменит лампы накаливания на светодиоды// Forbes, 23.03.2010
  4. "Optogan - High Brighness Led Technology". www.optogan.com. Archived from the original on 2010-03-23.
  5. LED Applications&Lighting Systems//The technology of tomorrow for general lighting applications, March-April 2010
  6. New results from Lumileds indicate an output of 136 lm at 350 mA for white LEDs, corresponding to 115 lm/W efficacy// LEDs Magazine, 23 January 2007
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