Reflectance difference spectroscopy

Reflectance difference spectroscopy (RDS) is a spectroscopic technique which measures the difference in reflectance of two beams of light that are shone in normal incident on a surface with different linear polarizations.[1] It is also known as reflectance anisotropy spectroscopy (RAS).[2]

It is calculated as:

and are the reflectance in two different polarizations.

The method was introduced in 1985 for the study optical properties of the cubic semiconductors silicon and germanium.[3] Due to its high surface sensitivity and independence of ultra-high vacuum, its use has been expanded to in situ monitoring of epitaxial growth[4] or the interaction of surfaces with adsorbates.[5] To assign specific features in the signal to their origin in morphology and electronic structure, theoretical modelling by density functional theory is required.

References

  1. Peter Y. Yu, Manuel Cardona ,"Fundamentals of Semiconductors"
  2. Weightman, P; Martin, D S; Cole, R J; Farrell, T (2005), "Reflection anisotropy spectroscopy", Reports on Progress in Physics, 68 (6): 1251, Bibcode:2005RPPh...68.1251W, doi:10.1088/0034-4885/68/6/R01, S2CID 94037903
  3. Aspnes, D. E.; Studna, A. A. (1985), "Anisotropies in the Above-Band-Gap Optical Spectra of Cubic Semiconductors", Physical Review Letters, 54 (17): 1956–1959, Bibcode:1985PhRvL..54.1956A, doi:10.1103/PhysRevLett.54.1956, PMID 10031185
  4. Richter, W.; Zettler, J.-T. (1996), "Real-time analysis of III--V-semiconductor epitaxial growth", Applied Surface Science, 100--101: 465–477, Bibcode:1996ApSS..100..465R, doi:10.1016/0169-4332(96)00321-2
  5. May, M. M.; Lewerenz, H.-J.; Hannappel, T. (2014), "Optical in situ Study of InP(100) Surface Chemistry: Dissociative Adsorption of Water and Oxygen", Journal of Physical Chemistry C, 118 (33): 19032, doi:10.1021/jp502955m


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