Frank–Van der Merwe growth

Frank–Van der Merwe growth (FM growth) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. It is also known as 'layer-by-layer growth'. It is considered an ideal growth model, requiring perfect lattice matching between the substrate and the layer growing on to it, and it is usually limited to homoepitaxy.[1] For FM growth to occur, the atoms that are to be deposited should be more attracted to the substrate than to each other, which is in contrast to the layer-plus-island growth model.[2] FM growth is the preferred growth model for producing smooth films.[3]

Frank–Van der Merwe growth model

It was first described by South African physicist Jan van der Merwe and British physicist Frederick Charles Frank in a series of four papers based on Van der Merwe's PhD research between 1947 and 1949.[4]

See also

References
  1. Cor Claeys; Eddy Simoen (29 December 2008). Extended Defects in Germanium: Fundamental and Technological Aspects. Springer Science & Business Media. p. 158. ISBN 978-3-540-85614-6.
  2. John Venables (31 August 2000). Introduction to Surface and Thin Film Processes. Cambridge University Press. p. 146. ISBN 978-0-521-78500-6.
  3. Matthias Wuttig; X. Liu (17 November 2004). Ultrathin Metal Films: Magnetic and Structural Properties. Springer Science & Business Media. p. 6. ISBN 978-3-540-58359-2.
  4. "Journal of Materials Research: Volume 32 - Focus Issue: Jan van der Merwe: Epitaxy and the Computer Age | Cambridge Core". Cambridge Core. Retrieved 2018-01-24.


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