J. J. Ebers Award

The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to transistors, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient (or recipients) is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.

Recipients

The past recipients are:

See also

References
Notes
  1. "Past J.J. Ebers Award Winners". IEEE Electron Devices Society. Institute of Electrical and Electronics Engineers. Retrieved 16 September 2019.
  2. J.J. Ebers Award, Institute of Electrical and Electronics Engineers, archived from the original on 3 February 2014, retrieved 3 February 2017
  3. "IGNIS founder Arokia Nathan wins the 2020 IEEE EDS J.J. Ebers Award". IGNIS. October 16, 2020.
  4. "Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors". Nature. 2016.
  5. Portilla, L., Loganathan, K., Faber, H. et al. Wirelessly powered large-area electronics for the Internet of Things. Nat Electron 6, 10–17 (2023)
Sources
This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.